Main features:

  • Multy reactor design: all layers in one vacuum cycle
  • High flexibility of PECVD process: top, bottom and double sidereactor at any position
  • No cross contamination of neighbor reactor
  • Minimal contact of wafer surface with transport system element
  • R&D oriented design
  • Typical materials for deposition: a-Si:H, n-doped a-Si:H, p-doped a-Si:H, SiOx, Si₃N₄, SiOCH


Product list